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Ordering number : ENA1401
CPH5871
SANYO Semiconductors
DATA SHEET
CPH5871
Features
*
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode
General-Purpose Switching Device Applications
*
*
*
Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] * Ultrahigh-speed switching * 1.8V drive [SBD] * Short reverse recovery time. * Low forward voltage. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% When mounted on ceramic substrate (600mm2x0.8mm) 1unit 30 12 3.5 14 0.9 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit
Marking : YZ
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
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12809PE MS IM TC-00001794 No. A1401-1/5
CPH5871
Continued from preceding page.
Parameter [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 35 1 10 --55 to +125 --55 to +125 V V A A C C Symbol Conditions Ratings Unit
Electrical Characteristics at Ta=25C
Parameter [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [SBD] Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Reverse Recovery Time VR VF1 VF2 IR C trr IR=0.5mA IF=0.7A IF=1A VR=16V VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. 27 10 30 0.45 0.48 0.5 0.53 15 V V V A pF ns V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A ID=2A, VGS=4.5V ID=1A, VGS=2.5V ID=0.5A, VGS=1.8V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=15V, VGS=4.5V, ID=3.5A VDS=15V, VGS=4.5V, ID=3.5A VDS=15V, VGS=4.5V, ID=3.5A IS=3.5A, VGS=0V 0.4 2.0 3.4 40 53 82 430 59 38 10 41 36 37 4.7 0.8 1.1 0.8 1.2 52 74 132 30 1 10 1.3 V A A V S m m m pF pF pF ns ns ns ns nC nC nC V Symbol Conditions Ratings min typ max Unit
Package Dimensions
unit : mm (typ) 7017A-005
Electrical Connection
5 4 3
0.6
2.9 5 4 3
0.15
1.6
2.8
0.05 1 1 0.95 2 0.4 2
0.2
1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode
Top view
1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5
0.9
0.2
0.6
No. A1401-2/5
CPH5871
Switching Time Test Circuit (MOSFET)
4.5V 0V VIN VDD=15V
trr Test Circuit (SBD)
Duty10% 100mA 10mA trr
VIN PW=10s D.C.1% G D
10s --5V
P.G
50
S
CPH5871
4.0
ID -- VDS
7.0V 4.5V
3.5V 2.5V
[MOSFET] Static Drain-to-Source On-State Resistance, RDS(on) -- m
140 120 100 80 60 40 20 0
RDS(on) -- VGS
ID=1A 2A
100mA
ID=2A RL=7.5 VOUT
50
100
10
[MOSFET] Ta=25C
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0
1.8V
Drain Current, ID -- A
0.5A
1.5V
VGS=1.2V
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
1
2
3
4
5
6
7
8
9
10
140
Drain-to-Source Voltage, VDS -- V IT14371 RDS(on) -- Ta [MOSFET] Forward Transfer Admittance, | yfs | -- S
Gate-to-Source Voltage, VGS -- V
7 5 3 2
| yfs | -- ID
IT14372
[MOSFET]
VDS=10V
Static Drain-to-Source On-State Resistance, RDS(on) -- m
120 100 80 60 40 20 0 --60
= VGS
0.5A , I D= 1.8V
A =1.0 , ID 2.5V = 2.0A VGS , I D= 4.5V = VGS
1.0 7 5 3 2
-2 =Ta
C 5
C 75
C 25
--40
--20
0
20
40
60
80
100
120
140
160
0.1 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
Ambient Temperature, Ta -- C
IT14373
Drain Current, ID -- A
IT14348
No. A1401-3/5
CPH5871
7 5 3 2
IS -- VSD
[MOSFET] VGS=0V Switching Time, SW Time -- ns
5 3 2 100 7 5 3 2 10 7 5 3
SW Time -- ID
[MOSFET] VDD=15V VGS=4.5V
Source Current, IS -- A
1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2
td(off)
Ta= 75C 25C --25 C
tf
td(on)
tr
2 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10 IT14350
1000 7 5
Diode Forward Voltage, VSD -- V IT14349 Ciss, Coss, Crss -- VDS [MOSFET] f=1MHz
Drain Current, ID -- A
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4
VGS -- Qg
[MOSFET] VDS=15V ID=3.5A
Ciss
Ciss, Coss, Crss -- pF
3 2
100 7 5 3 2 10
Coss
Crss
0
5
10
15
20
25
30
Gate-to-Source Voltage, VGS -- V
5
6 IT14374
3 2 10 7 5
IT14351 Drain-to-Source Voltage, VDS -- V ASO [MOSFET]
Total Gate Charge, Qg -- nC
1.0
PD -- Ta
[MOSFET]
Drain Current, ID -- A
3 2 1.0 7 5 3 2 0.1 7 5 3 2
ID=3.5A
10
DC op
10 0m
100 1m s s
Allowable Power Dissipation, PD -- W
IDP=14A
PW10s
0.9 0.8
When mounted on ceramic substrate (600mm2x0.8mm) 1unit
ms
Operation in this area is limited by RDS(on).
era
s
0.6
tio
n(T a= 25 C )
0.4
0.01 0.1
Ta=25C Single pulse When mounted on ceramic substrate (600mm2x0.8mm)1unit
2 3 5 7 1.0 2 3 5 7 10 2 3 5
0.2
0
0
20
40
60
80
100
120
140
160
Drain-to-Source Voltage, VDS -- V
3 2 1.0
IF -- VF
IT14375
Ambient Temperature, Ta -- C
10000 5 1000 5
[SBD]
IR -- VR
IT14376
[SBD]
Ta=125C 100C
Reverse Current, IR -- A
Forward Current, IF -- A
7 5 3 2 0.1 7 5 3 2 0.01
100 5 10 5 1.0 5 0.1 5 0.01 5
75C
50C
25C 0C
--25C
Ta= 125 C 100 C 75C 50C 25C 0C --25C
0.001 5 0.5 0.6 0.7 IT09553 0.0001 0 5 10 15 20 25 30 35 IT09554
0
0.1
0.2
0.3
0.4
Forward Voltage, VF -- V
Reverse Voltage, VR -- V
No. A1401-4/5
CPH5871
Average Forward Power Dissipation, PF(AV) -- W
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0
PF(AV) -- IO
Rectangular wave
360
[SBD] Interterminal Capacitance, C -- pF
3 2
C -- VR
[SBD]
(1)
(2) (4)(3)
100 7 5 3 2
Sine wave
180 360
(1)Rectangular wave =60 (2)Rectangular wave =120 (3)Rectangular wave =180 (4)Sine wave =180
0 0.2 0.4 0.6 0.8 1.0 1.2 IT09555
10 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5
Average Output Current, IO -- A
14
IFSM -- t
IS
[SBD]
Reverse Voltage, VR -- V
IT09556
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
12 10 8
20ms t
6 4
2 0
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Time, t -- s
ID00435
Note on usage : Since the CPH5871 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of January, 2009. Specifications and information herein are subject to change without notice.
PS No. A1401-5/5

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